reactive sputter etching

reactive sputter etching
Microelectronics: RSE

Универсальный русско-английский словарь. . 2011.

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  • Reactive-ion etching — (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High energy ions from the plasma… …   Wikipedia

  • Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… …   Wikipedia

  • Etching (microfabrication) — Etching tanks used to perform Piranha, Hydrofluoric acid or RCA clean on 4 inch wafer batches at LAAS technological facility in Toulouse, France Etching is used in microfabrication to chemically remove layers from the surface of a wafer during… …   Wikipedia

  • Sputtering — is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic ions. It is commonly used for thin film deposition, etching and analytical techniques (see below). Physics of sputtering Physical… …   Wikipedia

  • Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… …   Wikipedia

  • RIE — Plasma unterstütztes Ätzen ( physikalisch chemisches Ätzen) bezeichnet eine Gruppe von subtraktiven (abtragenden) Mikrostrukturverfahren in der Halbleitertechnologie. Als Trockenätzverfahren stellen eine alternative Strukturierungverfahren zu dem …   Deutsch Wikipedia

  • Reaktives Ionenätzen — Plasma unterstütztes Ätzen ( physikalisch chemisches Ätzen) bezeichnet eine Gruppe von subtraktiven (abtragenden) Mikrostrukturverfahren in der Halbleitertechnologie. Als Trockenätzverfahren stellen eine alternative Strukturierungverfahren zu dem …   Deutsch Wikipedia

  • Plasma processing — is a plasma based material processing technology that aims at modifying the chemical and physical properties of a surface.Plasma processing techniques include: *Plasma activation *Plasma modification *Plasma functionalization *Plasma… …   Wikipedia

  • Ion-beam sculpting — Ion Beam scultping is a term used to describe a two step process to make solid state nanopores. The term itself was coined by Golovchenko and co workers at Harvard in the paper Ion beam sculpting at nanometer length scales [J. Li, D. Stein, C.… …   Wikipedia

  • Direct bonding — describes a wafer bonding process without any additional intermediate layers. The bonding process is based on chemical bonds between two surfaces of any material possible meeting numerous requirements.[1] These requirements are specified for the… …   Wikipedia


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